2N7000-D26Z中文资料安森美半导体数据手册PDF规格书

描述 Description

These N−channel enhancement mode field effect transistors are

produced using onsemi’s proprietary, high cell density, DMOS

technology. These products have been designed to minimize on−state

resistance while providing rugged, reliable, and fast switching

performance. These products are particularly suited for low−voltage,

low−current applications, such as small servo motor control, power

MOSFET gate drivers, and other switching applications.

特性 Features

• High Density Cell Design for Low RDS(on)

• Voltage Controlled Small Signal Switch

• Rugged and Reliable

• High Saturation Current Capability

• ESD Protection Level: HBM > 100 V, CDM > 2 kV

• This Device is Pb−Free and Halogen Free