丝印：702；Package：SOT-23；N-Channel Enhancement Mode MOSFET

■ Features ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability

文件：74.34 Kbytes 页数：1 Pages

KEXIN

科信电子

N-Channel Enhancement Mode Power Mos.FET

FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATIONS ● Load switch for portable devices ● DC/DC converter

文件：358.46 Kbytes 页数：3 Pages

SECOS

喜可士

N-Channel Enhancement-Mode Vertical DMOS FET

General Description The Supertex 2N7000 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

文件：30.39 Kbytes 页数：4 Pages

SUTEX

N-channel 60V - 1.8ohm - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET

Description This Power MOSFET is the second generation of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：383.82 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

MOSFET( N-Channel )

FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability

文件：661.6 Kbytes 页数：3 Pages

KOOCHIN

灏展电子

丝印：2N7000021；Package：TO-92；N-Channel Enhancement Mode Power MOSFET

FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATIONS ● Load switch for portable devices ● DC/DC converter

文件：150.26 Kbytes 页数：2 Pages

SECELECTRONICS

上优电子

N-Channel Enhancement Mode Field Effect Transistor

Features High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,

文件：100.13 Kbytes 页数：7 Pages

SYC

N-Channel Enhancement Mode Field Effect Transistor

Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products

文件：372.34 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

FIELD EFFECT TRANSISTOR

INTERFACE AND SWITCHING APPLICATION. FEATURES • High density cell design for low RDS(ON). • Voltage controolled small signal switch. • Rugged and reliable. • High saturation current capablity.

文件：67.07 Kbytes 页数：4 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Advanced Small Signal MOSFET

BVDSS = 60 V RDS(on) = 5.0 Ω ID = 200 mA FEATURES ● Fast Switching Times ● Improved Inductive Ruggedness ● Lower Input Capacitance ● Extended Safe Operating Area ● Improved High Temperature Reliability

文件：85.23 Kbytes 页数：3 Pages

FAIRCHILD

仙童半导体