FIELD EFFECT TRANSISTOR

INTERFACE AND SWITCHING APPLICATION. FEATURES • High density cell design for low RDS(ON). • Voltage controolled small signal switch. • Rugged and reliable. • High saturation current capablity.

文件：67.07 Kbytes 页数：4 Pages

KEC

KEC(Korea Electronics)

INTERFACE AND SWITCHING APPLICATION.

文件：67.07 Kbytes 页数：4 Pages

KEC

KEC(Korea Electronics)

N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

INTERFACE AND SWITCHING APPLICATION.\nFEATURES\n·High density cell design for low RDS(ON).\n·Voltage controolled small signal switch.\n·Rugged and reliable.\n·High saturation current capablity. ·High density cell design for low RDS(ON).\n·Voltage controolled small signal switch.\n·Rugged and reliable.\n·High saturation current capablity.;

KEC

Advanced Small Signal MOSFET

BVDSS = 60 V RDS(on) = 5.0 Ω ID = 200 mA FEATURES ● Fast Switching Times ● Improved Inductive Ruggedness ● Lower Input Capacitance ● Extended Safe Operating Area ● Improved High Temperature Reliability

文件：85.23 Kbytes 页数：3 Pages

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Advanced Small-Signal MOSFET

文件：157.68 Kbytes 页数：5 Pages

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文件：18.83 Kbytes 页数：2 Pages

SEME-LAB