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2N7000G

Small Signal MOSFET 200 mAmps, 60 Volts

SmallSignalMOSFET200mAmps,60Volts N−ChannelTO−92 Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

2N7000G

N-channel 60V - 1.8ohm - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET

Description ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2N7000G

Small Signal MOSFET 200 mAmps, 60 Volts N?묬hannel TO??2 200 mAMPS 60 VOLTS

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

2N7000G-T92-B

N-CHANNEL ENHANCEMENT MODE

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

2N7000G-T92-K

N-CHANNEL ENHANCEMENT MODE

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

2N7000G-T92-R

N-CHANNEL ENHANCEMENT MODE

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

2N7000

CASE29-04,STYLE22TO-92(TO-226AA)

MotorolaMotorola, Inc

摩托罗拉

Motorola

2N7000

N-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription TheSupertex2N7000isanenhancement-mode(normally-off)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh

SUTEX

Supertex, Inc

SUTEX

2N7000

N-Channel60-V(D-S)MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

VishayVishay Siliconix

威世科技

Vishay

2N7000

N-CHANNEL-ENHANCEMENT

TRSYS

Transys Electronics

TRSYS

2N7000

N-ChannelEnhancementModeFieldEffectTransistor

Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

2N7000

DMOSTransistors(N-Channel)

GE

GE Industrial Company

GE

2N7000

SmallSignalMOSFET200mAmps,60VoltsN-ChannelTO-92

SmallSignalMOSFET200mAmps,60Volts N−ChannelTO−92 Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

2N7000

LogicN-ChannelMOSFET

GeneralDescription ThisPowerMOSFETisproducedusingplanarDMOStechnology.AndthisPowerMOSFETiswellsuitedforBatteryswitch,Loadswitch,Motorcontrollerandothersmallsignalswitches. Features ■RDS(on)(Max5Ω)@VGS=10V RDS(on)(Max5.3Ω)@VGS=4.5V ■GateCharge(Typical

semiWell

semiWell

semiWell

2N7000

N-ChannelEnhancementModeFieldEffectTransistor

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

NSC

2N7000

N-channel60V-1.8ohm-0.35A-SOT23-3L/TO-92STripFETPowerMOSFET

Description ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2N7000

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

■DESCRIPTION TheUTC2N7000hasbeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

2N7000

N-ChannelEnhancement-ModeVerticalDMOSFETs

SUTEX

Supertex, Inc

SUTEX

2N7000

N-channel60V-1.8廓-0.35A-SOT23-3L/TO-92STripFET??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2N7000

TECHNICALSPECIFICATIONSOFN-CHANNELSMALLSIGNALMOSFET

Description Designedforlowvoltageandlowcurrentapplicationssuchassmallservomotorcontrol,powerMOSFETgatedrivers,andotherswitchingapplications.

DCCOMDc Components

直流元件直流元件有限公司

DCCOM

详细参数

  • 型号:

    2N7000G

  • 功能描述:

    MOSFET 60V 200mA N-Channel

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ON(安森美)
23+
标准封装
9048
全新原装正品/价格优惠/质量保障
询价
ST/意法
22+
TO-92
9850
只做原装正品假一赔十!正规渠道订货!
询价
ON
23+
1018
原厂封装
询价
ON
23+
SMDDIP
9526
询价
ON
1436+
TO92
30000
绝对原装进口现货可开增值税发票
询价
ONS
1810
询价
ON
23+
TO-92
7750
全新原装优势
询价
ON
2016+
TO92
5000
只做原装,假一罚十,公司可开17%增值税发票!
询价
ON
11+
3180
询价
ON
2339+
N/A
4231
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
更多2N7000G供应商 更新时间2024-4-25 17:53:00