2N5401

AMPLIFIERTRANSISTORPNPSILICON

PNPSilicon

2N5401

TO-92PACKAGE

2N5401

AmplifierTransistorsPNPSilicon

AmplifierTransistors PNPSilicon Features •Pb−FreePackagesareAvailable*

2N5401

PNPEPITAXIALPLANARTRANSISTOR

Description The2N5401isdesignedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages. Features •ComplementstoNPNType2N5551. •HighCollector-EmitterBreakdownVoltage.VCEO=150V(@IC=1mA)

2N5401

PNPTransistorPlastic-EncapsulateTransistors

PNPTransistorPlastic-EncapsulateTransistors FEATURES PowerDissipation PCM:0.625W(Tamb=25) Collectorcurrent ICM:-0.6A Collector-basevoltage V(BR)CBO:-160V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2N5401

GeneralPurposeSi-EpitaxialPlanarTransistors

•Powerdissipation625mW •PlasticcaseTO-92 •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack

2N5401

Plastic-EncapsulatedTransistors

TO-92Plastic-EncapsulatedTransistors FEATURE Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:-0.6A Collector-basevoltage V(BR)CBO:-160V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2N5401

PNPPlasticEncapsulatedTransistor

2N5401

TECHNICALSPECIFICATIONSOFPNPEPITAXIALPLANARTRANSISTOR

Description Designedforgeneralpurposeamplifierapplications.

2N5401

TO-92Plastic-EncapsulateTransistors

TO-92Plastic-EncapsulateTransistors FEATURE Switchingandamplificationinhighvoltage Applicationssuchastelephony Lowcurrent(max.600mA) Highvoltage(max.160v)