2N5401

PNPhigh-voltagetransistor

DESCRIPTION PNPhigh-voltagetransistorinaTO-92;SOT54plasticpackage.NPNcomplement:2N5551. FEATURES •Lowcurrent(max.300mA) •Highvoltage(max.150V). APPLICATIONS •Generalpurposeswitchingandamplification •Telephonyapplications.

2N5401

PNPEPITAXIALSILICONTRANSISTOR

AMPLIFIERTRANSISTOR ●Collector-EmitterVoltage:VCEO=150V ●CollectorDissipation:Pc(max)=625mW

2N5401

PNPSiliconExpitaxialPlanarTransistorforgeneralpurpose,highvoltageamplifierapplications???

PNPSiliconExpitaxialPlanarTransistorforgeneralpurpose,highvoltageamplifierapplications

2N5401

PNPGeneralPurposeAmplifier

PNPGeneralPurposeAmplifier Thisdeviceisdesignedasageneralpurposeamplifierandswitchforapplicationsrequiringhighvoltages.SourcedfromProcess74.

2N5401

AmplifierTransistor(PNPSilicon)

PNPSilicon

2N5401

EPITAXIALPLANARPNPTRANSISTOR(GENERALPURPOSE,HIGHVOLTAGE)

GENERALPURPOSEAPPLICATION. HIGHVOLTAGEAPPLICATION. FEATURES •HighCollectorBreakdwonVoltage :VCBO=-160V,VCEO=-150V •LowLeakageCurrent. :ICBO=-50nA(Max.)@VCB=-120V •LowSaturationVoltage :VCE(sat)=-0.5V(Max.)@IC=-50mA,IB=-5mA •LowNoise:NF=8dB(Max.)

2N5401

COMPLEMENTARYSILICONGENERALPURPOSEHIGHVOLTAGETRANSISTORS

2N5400,2N5401-->PNP 2N5550,2N5551-->NPN

2N5401

PNPSiliconTransistor(GeneralpurposeamplifierHighvoltageapplication)

Description •Generalpurposeamplifier •Highvoltageapplication Features •Highcollectorbreakdownvoltage:VCBO=-160V,VCEO=-150V •Lowcollectorsaturationvoltage:VCE(sat)=-0.5V(MAX.) •Complementarypairwith2N5551

2N5401

AmplifierTransistors

AmplifierTransistors PNPSilicon Features •Pb−FreePackagesareAvailable*

2N5401

HIGHVOLTAGESWITCHINGTRANSISTOR

HIGHVOLTAGESWITCHINGTRANSISTOR FEATURES *Collector-emittervoltage:VCEO=-150V *Highcurrentgain

2N5401

SmallSignalTransistorsTO-92Case(Continued)

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N4400and2N4401aresiliconNPNtransistorsdesignedforgeneralpurposeamplifierandswitchingapplications.PNPcomplementarytypesare2N4402and2N4403. MARKING:FULLPARTNUMBER

2N5401

PNPTransistors

PNPTransistors

2N5401

Plastic-EncapsulatedTransistors

TO-92Plastic-EncapsulatedTransistors FEATURE Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:-0.6A Collector-basevoltage V(BR)CBO:-160V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2N5401

GeneralPurposeSi-EpitaxialPlanarTransistors

•Powerdissipation625mW •PlasticcaseTO-92 •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack

2N5401

PNPTransistorPlastic-EncapsulateTransistors

PNPTransistorPlastic-EncapsulateTransistors FEATURES PowerDissipation PCM:0.625W(Tamb=25) Collectorcurrent ICM:-0.6A Collector-basevoltage V(BR)CBO:-160V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2N5401

PNPSiliconAmplifierTransistor625mW

Features •HalogenFreeAvailableUponRequestByAddingSuffix-HF •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInformation)

2N5401

TO-92Plastic-EncapsulateTransistors

TO-92Plastic-EncapsulateTransistors FEATURE Switchingandamplificationinhighvoltage Applicationssuchastelephony Lowcurrent(max.600mA) Highvoltage(max.160v)

2N5401

TECHNICALSPECIFICATIONSOFPNPEPITAXIALPLANARTRANSISTOR

Description Designedforgeneralpurposeamplifierapplications.

2N5401

PNPPlasticEncapsulatedTransistor

2N5401

PNPEPITAXIALPLANARTRANSISTOR

Description The2N5401isdesignedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages. Features •ComplementstoNPNType2N5551. •HighCollector-EmitterBreakdownVoltage.VCEO=150V(@IC=1mA)