丝印：20H120G3AG；Package：H2PAK-7；Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an H²PAK-7 package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV

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STMICROELECTRONICS

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