1.0A SURFACE-MOUNT SCHOTTKY BARRIER RECTIFIER

Features and Benefits  High Surge Capability  Low Power Loss, High Efficiency  High Current Capability and Low Forward Voltage Drop  Guard Ring Die Construction for Transient Protection  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (

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DIODES

美台半导体

丝印：SL；Package：SOD123；1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features  High Surge Capability  Low Power Loss, High Efficiency  High Current Capability and Low Forward Voltage Drop  Guard Ring Die Construction for Transient Protection  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qu

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DIODES

美台半导体

1.0 AMP SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction

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BYTES

SCHOTTKY BARRIER DIODE

FEATURES * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage drop. * High surge current capability. * For use in low voltage, high frequency inverters, free wheeling diode, and polarity protection applications.

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UTC

友顺

1A SCHOTTKY BARRIER RECTIFIERS

FEATURES ● UL 94V0 FLAME RETARDANT EPOXY MOLDING COMPOUND ● EXTREMELY LOW VF ● LOW POWER LOSS/HIGH EFFICIENCY ● LOW STORED CHARGE, MAJORITY CARRIER CONDUCTION ● LEAD FREE

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FRONTIER

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features ● High Current Capability ● Low Forward Voltage Drop ● Guard Ring for Transient Protection ● Glass Package for High Reliability ● Packaged for Surface Mount Applications

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DIODES

美台半导体

Axial Lead Rectifiers

Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−volt

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ONSEMI

安森美半导体

Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS

This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency

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ONSEMI

安森美半导体

LOW DROP POWER SCHOTTKY RECTIFIER

DESCRIPTION Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in DO41 these devices are intended for use in low voltage, high frequency inverters, free wheeling, polarity protection and small battery chargers. FEATURES AND BENEF

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STMICROELECTRONICS

意法半导体

Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS

This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency

文件：249.43 Kbytes 页数：9 Pages

ONSEMI

安森美半导体