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1N5819G

Axial Lead Rectifiers

Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−volt

文件:75.98 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

1N5819H

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • For use in low voltage,high frequency inverters ,f

文件:51.96 Kbytes 页数:2 Pages

PANJIT

強茂

1N5819HW

丝印:SL;Package:SOD-123;1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Description and Applications The device is a single rectifier offering low VF and excellent high temperature stability. This device is ideal for use in general rectification applications: • For Use in Low Voltage, High Frequency Inverters • Free Wheeling • Polarity Protection Application Feat

文件:61.61 Kbytes 页数:5 Pages

DIODES

美台半导体

1N5819HW

丝印:SL;Package:SOD-123;1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application • Lead, Hal

文件:103.31 Kbytes 页数:4 Pages

DIODES

美台半导体

1N5819HW

1.0A SURFACE-MOUNT SCHOTTKY BARRIER RECTIFIER

Features and Benefits  High Surge Capability  Low Power Loss, High Efficiency  High Current Capability and Low Forward Voltage Drop  Guard Ring Die Construction for Transient Protection  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (

文件:399.22 Kbytes 页数:5 Pages

DIODES

美台半导体

1N5819HW_10

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application • Lead, Hal

文件:103.31 Kbytes 页数:4 Pages

DIODES

美台半导体

1N5819HW_V01

1.0A SURFACE-MOUNT SCHOTTKY BARRIER RECTIFIER

Features and Benefits  High Surge Capability  Low Power Loss, High Efficiency  High Current Capability and Low Forward Voltage Drop  Guard Ring Die Construction for Transient Protection  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (

文件:399.22 Kbytes 页数:5 Pages

DIODES

美台半导体

1N5819HW-7-F

1.0A SURFACE-MOUNT SCHOTTKY BARRIER RECTIFIER

Features and Benefits  High Surge Capability  Low Power Loss, High Efficiency  High Current Capability and Low Forward Voltage Drop  Guard Ring Die Construction for Transient Protection  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (

文件:399.22 Kbytes 页数:5 Pages

DIODES

美台半导体

1N5819HW-7-F

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application • Lead, Hal

文件:103.31 Kbytes 页数:4 Pages

DIODES

美台半导体

1N5819HWQ

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features  High Surge Capability  Low Power Loss, High Efficiency  High Current Capability and Low Forward Voltage Drop  Guard Ring Die Construction for Transient Protection  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qu

文件:318.66 Kbytes 页数:5 Pages

DIODES

美台半导体

产品属性

  • 产品编号:

    1N5819

  • 制造商:

    Taiwan Semiconductor Corporation

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 单

  • 包装:

    卷带(TR)

  • 二极管类型:

    肖特基

  • 电流 - 平均整流 (Io):

    1A

  • 速度:

    快速恢复 =< 500ns,> 200mA(Io)

  • 不同 Vr、F 时电容:

    55pF @ 4V,1MHz

  • 安装类型:

    通孔

  • 封装/外壳:

    DO-204AL,DO-41,轴向

  • 供应商器件封装:

    DO-204AL(DO-41)

  • 工作温度 - 结:

    -55°C ~ 125°C

  • 描述:

    DIODE SCHOTTKY 40V 1A DO204AL

供应商型号品牌批号封装库存备注价格
0N
25+
标准
5000
公司原装现货
询价
MIC
2013
805
200
全新原装 正品现货
询价
TOSHIBA
23+
SOT-323
13
全新原装的现货
询价
25+
300
公司现货库存
询价
国产
24+
DO214
6580
原装现货!
询价
23+
SMD
618000
明嘉莱只做原装正品现货
询价
KEXIN/科信
25+
SMA
32000
KEXIN/科信全新特价1N5819即刻询购立享优惠#长期有货
询价
TOS
24+
DO-214
1500
原装现货假一罚十
询价
N/A
24+
两脚直插
2500
进口原装现货/假一赔十
询价
GD
24+
SOD-123
9700
绝对原装正品现货假一罚十
询价
更多1N5819供应商 更新时间2026-1-21 17:44:00