1N5819HW资料datasheet下载行情报价DIODES-114ic电子网

首页 >1N5819HW>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
1N5819HW	文件：61.61 Kbytes Page：5 Pages	丝印：SL；Package：SOD-123；1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Description and Applications The device is a single rectifier offering low VF and excellent high temperature stability. This device is ideal for use in general rectification applications: • For Use in Low Voltage, High Frequency Inverters • Free Wheeling • Polarity Protection Application Feat 文件：61.61 Kbytes 页数：5 Pages	DIODES 美台半导体	DIODES
1N5819HW	文件：103.31 Kbytes Page：4 Pages	丝印：SL；Package：SOD-123；1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application • Lead, Hal 文件：103.31 Kbytes 页数：4 Pages	DIODES 美台半导体	DIODES
1N5819HW	文件：399.22 Kbytes Page：5 Pages	1.0A SURFACE-MOUNT SCHOTTKY BARRIER RECTIFIER Features and Benefits  High Surge Capability  Low Power Loss, High Efficiency  High Current Capability and Low Forward Voltage Drop  Guard Ring Die Construction for Transient Protection  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device ( 文件：399.22 Kbytes 页数：5 Pages	DIODES 美台半导体	DIODES
1N5819HW	文件：82.75 Kbytes Page：3 Pages	丝印：SL；Package：SOD-123；1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER 文件：82.75 Kbytes 页数：3 Pages	DIODES 美台半导体	DIODES
1N5819HW	文件：297.32 Kbytes Page：5 Pages	1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER 文件：297.32 Kbytes 页数：5 Pages	DIODES 美台半导体	DIODES
1N5819HW_10	文件：103.31 Kbytes Page：4 Pages	1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application • Lead, Hal 文件：103.31 Kbytes 页数：4 Pages	DIODES 美台半导体	DIODES
1N5819HW_V01	文件：399.22 Kbytes Page：5 Pages	1.0A SURFACE-MOUNT SCHOTTKY BARRIER RECTIFIER Features and Benefits  High Surge Capability  Low Power Loss, High Efficiency  High Current Capability and Low Forward Voltage Drop  Guard Ring Die Construction for Transient Protection  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device ( 文件：399.22 Kbytes 页数：5 Pages	DIODES 美台半导体	DIODES
1N5819HW-7-F	文件：399.22 Kbytes Page：5 Pages	1.0A SURFACE-MOUNT SCHOTTKY BARRIER RECTIFIER Features and Benefits  High Surge Capability  Low Power Loss, High Efficiency  High Current Capability and Low Forward Voltage Drop  Guard Ring Die Construction for Transient Protection  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device ( 文件：399.22 Kbytes 页数：5 Pages	DIODES 美台半导体	DIODES
1N5819HW-7-F	文件：103.31 Kbytes Page：4 Pages	1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application • Lead, Hal 文件：103.31 Kbytes 页数：4 Pages	DIODES 美台半导体	DIODES
1N5819HWQ	文件：318.66 Kbytes Page：5 Pages	1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features  High Surge Capability  Low Power Loss, High Efficiency  High Current Capability and Low Forward Voltage Drop  Guard Ring Die Construction for Transient Protection  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qu 文件：318.66 Kbytes 页数：5 Pages	DIODES 美台半导体	DIODES

技术参数

Compliance (Only Automotive supports PPAP)：
Standard
Configuration：
Single
MaximumAverageRectifiedCurrent IO (A)：
1 A
@ TerminalTemperature TT (ºC)：
90 ºC
Peak RepetitiveReverse VoltageVRRM (V)：
40 V
Peak ForwardSurge CurrentIFSM (A)：
25 A
Forward Voltage Drop VF (V)：
0.45 V
@ IF (A)：
1 A
Maximum ReverseCurrent IR (µA)：
1000 µA
@ VR (V)：
40 V
TotalCapacitance CT (pF)：
50 pF
Packages：
SOD123

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市特瑞斯科技有限公司	1N5819HW	DIODES	23+	SOD-123	963000	一级分销商	询价
深圳市创新迹电子有限公司	1N5819HW	SIPUSEMI	2021+	SOD-123	9000	原装现货,随时欢迎询价	询价
深圳市诚利顺电子科技有限公司	1N5819HW	DIODES	25+	SOD123	6500	十七年专营原装现货一手货源,样品免费送	询价
深圳市得捷芯城科技有限公司	1N5819HW	Diodes(美台)	24+	N/A	13048	原厂可订货,技术支持,直接渠道。可签保供合同	询价
深圳市一线半导体有限公司	1N5819HW	DIODES	24+	SOD-1231206	57200	新进库存/原装	询价
深圳冠荣电子有限公司	1N5819HW	SUNMATE(森美特)	2019+ROHS	DO-214AC(SMA)	66688	森美特高品质产品原装正品免费送样	询价
深圳市弘为电子有限公司	1N5819HW	ON	24+	SOD123	9000	原装现货假一罚十	询价
上海专毅电子科技有限公司	1N5819HW	DIODES	25+	NA	9998	只做原装正品QQ2107571078 微信17621580780于小姐	询价
深圳市振宏微科技有限公司	1N5819HW	SOD-123	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳市华斯顿科技有限公司	1N5819HW	DIODES	25+23+	SOT-123	32042	绝对原装正品全新进口深圳现货	询价

更多1N5819HW供应商更新时间2025-10-10 10:01:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2025 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号