丝印：SL；Package：SOD-123；1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Description and Applications The device is a single rectifier offering low VF and excellent high temperature stability. This device is ideal for use in general rectification applications: • For Use in Low Voltage, High Frequency Inverters • Free Wheeling • Polarity Protection Application Feat

文件：61.61 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：SL；Package：SOD-123；1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application • Lead, Hal

文件：103.31 Kbytes 页数：4 Pages

DIODES

美台半导体

丝印：SL；Package：SOD123；1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features  High Surge Capability  Low Power Loss, High Efficiency  High Current Capability and Low Forward Voltage Drop  Guard Ring Die Construction for Transient Protection  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qu

文件：318.66 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：SL；Package：SOD-323；SCHOTTKY BARRIER RECTIFIERS

FEATURES • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability • Low forward voltage drop • High surge capability • For use in low voltage, high frequency inverters, free wheeling, and pola

文件：557.38 Kbytes 页数：3 Pages

FS

丝印：SL；Package：SOD-323；Schottky Barrier Rectifiers

Features ● Metal silicon junction, majority carrier conduction ● Guarding for overvoltage protection ● Low power loss, high efficiency ● High current capability ● Low forward voltage drop ● High surge capability ● For use in low voltage, high frequency inverters, free wheeling, and pola

文件：530.81 Kbytes 页数：3 Pages

PJSEMI

平晶半导体

丝印：SL；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

Features ● Glass Passivated Die Construction ● Uni- and Bi-Directional Versions Available ● Excellent Clamping Capability ● Fast Response Time ● Plastic Material: UL Flammability Classification Rating 94V-0

文件：692.73 Kbytes 页数：5 Pages

SUNMATE

森美特

丝印：SL；Package：SOT23；45 V, 100 mA PNP general-purpose transistors

Features * General-purpose transistors * Two current gain selections * AEC-Q101 qualified * Small SMD plastic package

文件：614.42 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：SL；Package：SOD-123；SCHOTTKY BARRIER RECTIFIERS

Reverse Voltage - 20 to 40 V Forward Current - 1 A FEATURES ♦ Metal silicon junction, majority carrier conduction ♦ Guarding for overvoltage protection ♦ Low power loss, high efficiency ♦ High current capability ♦ low forward voltage drop ♦ High surge capability ♦ For use in low voltage,

文件：378.03 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：SL；Package：SOD-123；SOD-123 Plastic-Encapsulat e Schottky Barrier Diode

Features High Current Capability Low Forward Voltage Drop P/N suffix V means AEC-Q101 qualified, e.g:B5817WV P/N suffix V means Halogen-free

文件：443.58 Kbytes 页数：4 Pages

RECTRON

丽正国际

丝印：SL；Package：SOD-123；Low stored change,majority carrier conduction.

FEATURES： ◆ Extremely low VF. ◆ Low stored change,majority carrier conduction. ◆ Low power loss/high efficient ◆ For Use In Low Voltage, High Frequency Inverters. ◆ Free Wheeling, And Polarity Protection Applications.

文件：790.7 Kbytes 页数：3 Pages

LEIDITECH

雷卯电子