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1N5819HWQ

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features  High Surge Capability  Low Power Loss, High Efficiency  High Current Capability and Low Forward Voltage Drop  Guard Ring Die Construction for Transient Protection  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qu

文件:318.66 Kbytes 页数:5 Pages

DIODES

美台半导体

1N5819HWQ

1.0A SURFACE-MOUNT SCHOTTKY BARRIER RECTIFIER

Features and Benefits  High Surge Capability  Low Power Loss, High Efficiency  High Current Capability and Low Forward Voltage Drop  Guard Ring Die Construction for Transient Protection  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (

文件:399.22 Kbytes 页数:5 Pages

DIODES

美台半导体

1N5819HWQ-7-F

丝印:SL;Package:SOD123;1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features  High Surge Capability  Low Power Loss, High Efficiency  High Current Capability and Low Forward Voltage Drop  Guard Ring Die Construction for Transient Protection  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qu

文件:318.66 Kbytes 页数:5 Pages

DIODES

美台半导体

1N5819HWQ

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

The device is a single rectifier offering low VF and excellent high temperature stability.  •High Surge Capability\n•Low Power Loss, High Efficiency\n•High Current Capability and Low Forward Voltage Drop\n•Guard Ring Die Construction for Transient Protection\n•Totally Lead-Free & Fully RoHS Compliant \n•Halogen and Antimony Free. “Green” Device \n•Qualified to AEC-Q101 Standards for High R;

Diodes

美台半导体

1N5819HWQ-7-F

Package:SOD-123;包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:分立半导体产品 二极管 - 整流器 - 单 描述:SCHOTTKY RECTIFIER SOD123

PAM

龙鼎微

技术参数

  • PPAP Capable:

    Yes

  • Configuration:

    Single

  • Maximum Average Rectified Current IO:

    1 A

  • @ Terminal Temperature TT:

    90 ºC

  • Peak Repetitive Reverse Voltage VRRM:

    40 V

  • Peak Forward Surge Current IFSM:

    25 A

  • Forward Voltage Drop VF (V):

    0.45

  • @ IF:

    1 A

  • Maximum Reverse Current IR:

    1000 µA

  • @ VR:

    40 V

  • Reverse Recovery Time trr:

    N/A ns

  • Total Capacitance CT:

    50 pF

  • Packages:

    SOD123

供应商型号品牌批号封装库存备注价格
DIODES/美台
20+
SMD
88800
DIODES原装优势主营型号-可开原型号增税票
询价
Diodes(美台)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
DIODES/美台
21+
SOD-123
10000
原装,品质保证,请来电咨询
询价
DIODES/美台
23+
NA
6000
原装正品假一罚百!可开增票!
询价
DIODES/美台
24+
NA
30000
房间原装现货特价热卖,有单详谈
询价
DIODES/美台
24+
SOD-123
6000
全新原装深圳仓库现货有单必成
询价
DIODES/美台
21+
SOD-123
8080
只做原装,质量保证
询价
DIODESINC
22+
N/A
24000
现货,原厂原装假一罚十!
询价
DIODES/美台
22+
SOD123
27000
原装正品
询价
DIODES/美台
25
SOD-123
6000
原装正品
询价
更多1N5819HWQ供应商 更新时间2025-10-11 16:37:00