1 AMP SCHOTTKY BARRIER RECTIFIERS

1 Amp Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● Low Forward Voltage ● High Reliability ● High Current Capability

文件：42.52 Kbytes 页数：2 Pages

Microsemi

美高森美

1.0 Ampere Schottky Barrier Rectifiers

Features • 1.0 ampere operation at TA = 90°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.

文件：36.22 Kbytes 页数：2 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

1.0 Ampere Schottky Barrier Rectifiers

Features • 1.0 ampere operation at TA = 90°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.

文件：109.41 Kbytes 页数：3 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

1 Amp Schottky Rectifier

1 Amp Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● Low Forward Voltage ● High Reliability ● High Current Capability

文件：115.13 Kbytes 页数：3 Pages

Microsemi

美高森美

Axial Lead Rectifiers

Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−volt

文件：75.98 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS

This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency

文件：249.43 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Schottky Barrier Rectifiers

FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in    accordance to WEEE 2002/96/EC

文件：36.79 Kbytes 页数：2 Pages

VishayVishay Siliconix

威世

Schottky Barrier Plastic Rectifier

FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com

文件：75.06 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世

SCHOTTKY BARRIER DIODE

FEATURES * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage drop. * High surge current capability. * For use in low voltage, high frequency inverters, free wheeling diode, and polarity protection applications.

文件：88.24 Kbytes 页数：4 Pages

UTC

友顺

Schottky Barrier Rectifier

文件：58.98 Kbytes 页数：1 Pages

Central