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1N5819-TB

1.0A SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

文件:36.9 Kbytes 页数:3 Pages

WTE

Won-Top Electronics

1N5819T-G

Schottky Barrier Rectifiers

Features - Epitaxial construction. - Low forward voltage drop. - Metal-Semiconductor junction with guard ring. - High current capability. - For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications.

文件:77.12 Kbytes 页数:3 Pages

COMCHIP

典琦

1N5819TR

SCHOTTKY RECTIFIER 1.0 Amp

Description/Features The 1N5818/ 1N5819 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. • Low profile, axial leaded

文件:88.36 Kbytes 页数:5 Pages

IRF

1N5819TR

Schottky Rectifier, 1.0 A

DESCRIPTION The 1N5819 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial leaded outline

文件:79.79 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

1N5819UR

1 AMP SCHOTTKY BARRIER RECTIFIERS

• 1N5819UR-1 AND 1N6761UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/586 • 1 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED

文件:34.05 Kbytes 页数:2 Pages

CDI-DIODE

1N5819UR

1 AMP SCHOTTKY BARRIER RECTIFIERS

• 1N5819UR-1 AND 1N6761UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/586 • 1 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED

文件:48.37 Kbytes 页数:2 Pages

MICROSEMI

美高森美

1N5819W

SOD 123 Plastic-Encapsulate Diodes

Schottky Rectifier Features ● VR 20-40V ● IFAV 1A Applications ● Rectifier

文件:1.96288 Mbytes 页数:4 Pages

HDSEMI

海德半导体

1N5819W

丝印:14A;Package:SOD-123;Schottky Diodes

■ Features ● Low power loss, high efficiency ● High current capability ● Low forward voltage drop ● High Surge Capability

文件:233.87 Kbytes 页数:3 Pages

KEXIN

科信电子

1N5819W

SCHOTTKY BARRIER RECTIFIERS

FEATURES • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability • low forward voltage drop • High surge capability • For use in low voltage, high frequency inverters, free wheeling, and pola

文件:123.88 Kbytes 页数:3 Pages

SEMIPOWER

芯派科技

1N5819W

丝印:K14;Package:SOD-123FL;SCHOTTK Y BARRIER DIODE

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

文件:477.75 Kbytes 页数:3 Pages

SY

顺烨电子

产品属性

  • 产品编号:

    1N5819

  • 制造商:

    Taiwan Semiconductor Corporation

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 单

  • 包装:

    卷带(TR)

  • 二极管类型:

    肖特基

  • 电流 - 平均整流 (Io):

    1A

  • 速度:

    快速恢复 =< 500ns,> 200mA(Io)

  • 不同 Vr、F 时电容:

    55pF @ 4V,1MHz

  • 安装类型:

    通孔

  • 封装/外壳:

    DO-204AL,DO-41,轴向

  • 供应商器件封装:

    DO-204AL(DO-41)

  • 工作温度 - 结:

    -55°C ~ 125°C

  • 描述:

    DIODE SCHOTTKY 40V 1A DO204AL

供应商型号品牌批号封装库存备注价格
0N
25+
标准
5000
公司原装现货
询价
MIC
2013
805
200
全新原装 正品现货
询价
TOSHIBA
23+
SOT-323
13
全新原装的现货
询价
25+
300
公司现货库存
询价
国产
24+
DO214
6580
原装现货!
询价
23+
SMD
618000
明嘉莱只做原装正品现货
询价
KEXIN/科信
25+
SMA
32000
KEXIN/科信全新特价1N5819即刻询购立享优惠#长期有货
询价
TOS
24+
DO-214
1500
原装现货假一罚十
询价
N/A
24+
两脚直插
2500
进口原装现货/假一赔十
询价
GD
24+
SOD-123
9700
绝对原装正品现货假一罚十
询价
更多1N5819供应商 更新时间2026-1-21 17:44:00