IPTG020N13NM6

Marking：020N13N6；Package：PG-HSOG-8；MOSFET OptiMOSTM 6 Power-Transistor, 135 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •100avalanchetested •175°Coperatingtemperature •Optimizedformotordrivesandbatterypoweredapplications •Pb-freeleadpla

IQD020N10NM5

Marking：02010N5；Package：PG-TSON-8；MOSFET OptiMOSTM 5 Power-Transistor, 100 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IQD020N10NM5CG

Marking：02010NC；Package：PG-TTFN-9；MOSFET OptiMOSTM 5 Power-Transistor, 100 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

NCE0202M

Marking：0202M；Package：SOT-89-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE0202Musesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=200V,ID=2A RDS(ON)

NVMYS020N08LHTWG

Marking：020N08LH；Package：LFPAK4；MOSFET - Power, Single N-Channel 80 V, 19.5 m, 30 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVTYS020N08HLTAG

Marking：020N08HL；Package：LFPAK8；MOSFET - Power, Single N-Channel 80 V, 20 m, 30 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

PB020NE7N3G

Marking：020NE7N；Package：PG-TO263-3；3Power-Transistor

Features Optimizedtechnologyforsynchronousrectification IdealforhighfrequencyswitchingandDC/DCconverters ExcellentgatechargeXRponProduct(FOM) Verylowon-resistanceRosen) N-channel,normallevel 100%avalanchetested Pb-freeplating;RoHScompliant Qualified

SMD1812B020TF-J

Marking：020.J；Positive Temperature Coefficient (PTC) Data Sheet

Description The1812seriesprovidessurfacemountresettableovercurrentprotectionwith holdingcurrentfrom0.1Ato3.0A.Thisseriesofferscompleteportfoliointermsof holdingcurrentandworkingvoltage,andissuitableforwiderangeofapplication. Features ■RoHScompliantandle

8L30205NLGI

Marking：0205GI；Package：VFQFN；Crystal or Different ial-to-LVCMOS/LVTTL Clock Buffer

8L30205NLGI8

Marking：0205GI；Package：VFQFN；Crystal or Different ial-to-LVCMOS/LVTTL Clock Buffer