丝印：020；WE-CST Current Sense Transformer

General Information: Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：595.62 Kbytes 页数：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：020；Positive Temperature Coefficient (PTC) Data Sheet

Description The 1812 series provides surface mount resettable overcurrent protection with holding current from 0.1A to 3.0A. This series offers complete portfolio in terms of holding current and working voltage, and is suitable for wide range of application. Features ■ RoHS compliant and le

文件：834.52 Kbytes 页数：11 Pages

BRIGHTKING

君耀

丝印：020N04TB；Package：TO-263；MOSFET

Features - Super low RDS(on) and gate charge. - AEC-Q101 Qualified. - Advanced shielded-gate technology. - Green device available.

文件：530.66 Kbytes 页数：6 Pages

COMCHIP

典琦

丝印：020N03LS；Package：PG-TDSON-8；OptiMOS?? Power-MOSFET

Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanc

文件：685.38 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：020N03MS；Package：PG-TDSON-8；OptiMOS?? M-Series Power-MOSFET

Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100 Avalanche tested • N-channel • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM) • Qualified according to JEDEC1) for target applications

文件：386.66 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：020N03F2；Package：PG-TO252-3；MOSFET StrongIRFET™ 2 PowerTransistor, 30 V

Features • Optimized for wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：946.92 Kbytes 页数：13 Pages

Infineon

英飞凌

丝印：020N03F2；Package：PG-TO220-3；MOSFET StrongIRFET™2 Power‑Transistor, 30 V

Features • Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：835.67 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：020N10N5；Package：PG-HSOF-8；OptiMOSTM 5 Power-Transistor, 100 V

Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.029609 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：020N13N6；Package：PG-HSOF-8；MOSFET OptiMOSTM 6 Power-Transistor, 135 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • 100 avalanche tested • 175°C operating temperature • Optimized for motor drives and battery powered applications • Pb-free lead pla

文件：948.78 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：020N13N6；Package：PG-HDSOP-16；MOSFET OptiMOSTM 6 Power-Transistor, 135 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • 100 avalanche tested • 175°C operating temperature • Optimized for motor drives and battery powered applications • Pb-free lead pla

文件：1.37681 Mbytes 页数：11 Pages

Infineon

英飞凌