丝印：021N；Package：4BallWLCSP；250mA Single LDO with Low IQ, Low Noise and High PSRR LDO

250mA Single LDO with Low IQ, Low Noise and High PSRR LDO The ISL9021 is a single LDO providing high performance low input voltage, high PSRR. It delivers guaranteed continuous 250mA load current and is stable with 1µF to 4.7µF of output capacitance (±30) with an ESR range of 5mΩ to 400mΩ. Featu

文件：494.85 Kbytes 页数：10 Pages

RENESAS

瑞萨

丝印：021N06N；Package：PG-TO263-3；OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec.

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified accordin

文件：483.71 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：021N13N6；Package：PG-TO263-7；MOSFET OptiMOSTM 6 Power-Transistor, 135 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • 100 avalanche tested • 175°C operating temperature • Optimized for motor drives and battery powered applications • Pb-free lead pla

文件：1.07349 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：021N10MCL；Package：LFPAK4；MOSFET – Power, Single N-Channel 100 V, 23 m, 31 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AECïQ101 Qualified and PPAP Capable • These Devices are PbïFree, Halogen Free/BFR Free and are RoHS Compliant

文件：324.29 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：021N05N；Package：PG-TSON-8-3；MOSFET- OptiMOS5 Power-Transistor,80v

文件：1.7837 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：021N06CL；Package：LFPAK4；Power MOSFET 60 V, 21 m, 27 A, Single N?묬hannel

文件：324.24 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：021N06CL；Package：LFPAK4；MOSFET ??Power, Single N-Channel

文件：202.65 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec.

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified accordin

文件：483.71 Kbytes 页数：11 Pages

Infineon

英飞凌