021N

型号：ISL9021IINZ-T；Package：4BallWLCSP；250mA Single LDO with Low IQ, Low Noise and High PSRR LDO

250mASingleLDOwithLowIQ,LowNoiseandHighPSRRLDO TheISL9021isasingleLDOprovidinghighperformancelowinputvoltage,highPSRR.Itdeliversguaranteedcontinuous250mAloadcurrentandisstablewith1µFto4.7µFofoutputcapacitance(±30)withanESRrangeof5mΩto400mΩ. Featu

021N06N

型号：IPB021N06N3G；Package：PG-TO263-3；OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec.

Features •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •Qualifiedaccordin

021N13N6

型号：IPF021N13NM6；Package：PG-TO263-7；MOSFET OptiMOSTM 6 Power-Transistor, 135 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •100avalanchetested •175°Coperatingtemperature •Optimizedformotordrivesandbatterypoweredapplications •Pb-freeleadpla

021N10MCL

型号：NVMYS021N10MCLTWG；Package：LFPAK4；MOSFET – Power, Single N-Channel 100 V, 23 m, 31 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AECïQ101QualifiedandPPAPCapable •TheseDevicesarePbïFree,HalogenFree/BFRFreeandareRoHSCompliant

021N05N

型号：BSC021N08NS5；Package：PG-TSON-8-3；MOSFET- OptiMOS5 Power-Transistor,80v

021N06CL

型号：NTMYS021N06CLTWG；Package：LFPAK4；Power MOSFET 60 V, 21 m, 27 A, Single N?묬hannel

021N06CL

型号：NVMYS021N06CLTWG；Package：LFPAK4；MOSFET ??Power, Single N-Channel