IPP022N12NM6芯片代码丝印对应型号-114ic电子网

丝印	下载订购	功能描述	制造商上传企业	LOGO
022N12N6	文件：1.14854 Mbytes Page：11 Pages	型号：IPB022N12NM6；Package：PG-TO263-3；MOSFET OptiMOSTM 6 Power-Transistor, 120 V Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching and synchronous rectification • 文件：1.14854 Mbytes 页数：11 Pages	英飞凌	ETC
022N12N6	文件：1.68825 Mbytes Page：11 Pages	型号：IPP022N12NM6；Package：PG-TO220-3；MOSFET OptiMOSTM 6 Power-Transistor, 120 V Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching and synchronous rectification • 文件：1.68825 Mbytes 页数：11 Pages	英飞凌	ETC

更多022N12N6供应商更新时间2025-8-5 18:54:00