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ISC022N10NM6

Marking:022N1N6;Package:PG-TSON-8-3;OptiMOSTM 6 Power-Transistor, 100 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Optimizedforhighfrequencyswitchingandsynchronousrectification •

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

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