丝印：020N03LS；Package：PG-TDSON-8；OptiMOS?? Power-MOSFET

Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanc

文件：685.38 Kbytes 页数：10 Pages

Infineon

英飞凌

OptiMOS?? Power-MOSFET

文件：392.9 Kbytes 页数：10 Pages

Infineon

英飞凌

OptiMOS?? M-Series Power-MOSFET

Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100 Avalanche tested • N-channel • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM) • Qualified according to JEDEC1) for target applications

文件：386.66 Kbytes 页数：10 Pages

Infineon

英飞凌

N-Channel Enhancement Mode Power MOSFET

Description The G020N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：887.18 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The G020N03T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.01221 Mbytes 页数：6 Pages

GOFORD

谷峰半导体