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NVLJWD023N04CLTAG

Marking:023N;Package:WDFNW6;MOSFET – Power, Dual N-Channel 40 V, 23 m, 25 A

Features •SmallFootprintforCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BSC023N08NS5SC

Marking:023N08SC;Package:PG-WSON-8;OptiMOSTM 5 Power-Transistor, 80 V

Features •Dual-sidecooledpackagewithlowestJunction-topthermalresistance •Optimizedforsynchronousrectificationinserveranddesktop •100avalanchetested •Superiorthermalresistance •N-channel •175°Crated •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingto

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPB023N04NF2S

Marking:023N04NS;Package:PG-TO263-3;StrongIRFETTM2 Power-Transistor

Features •Optimizedforwiderangeofapplications •N-channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPD023N03LF2S

Marking:023N03F2;Package:PG-TO252-3;MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features •Optimizedforawiderangeofapplications •N‑channel,logiclevel •100%avalanchetested •175°Crated •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPD023N04NF2S

Marking:023N04NS;Package:PG-TO252-3;StrongIRFETTM2 Power-Transistor

Features •Optimizedforwiderangeofapplications •N-channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPF023N08NF2S

Marking:023N08NS;Package:PG-TO263-7;StrongIRFETTM 2 Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPP023N03LF2S

Marking:023N03F2;Package:PG-TO220-3;MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features •Optimizedforawiderangeofapplications •N‑channel,logiclevel •100%avalanchetested •175°Crated •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

ISC023N03LF2S

Marking:023N03F2;Package:PG-TDSON-8;MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features •Optimizedforawiderangeofapplications •N‑channel,logiclevel •100%avalanchetested •175°Crated •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

TF023N04NG

Marking:023N04NG;Package:PDFNWB5X6-8L;N-CHANNEL ENHANCEMENT MODE POWER MOSFET

●GeneralDescription TheTF023N04NGusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. ●Features Advancedeviceconstructure LowRDS(ON)tominimizeconductionloss LowGateChargeforfastswitchin

TUOFENGShenzhen Tuofeng Semiconductor Technology Co

拓锋半导体深圳市拓锋半导体科技有限公司

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