丝印：023N；Package：WDFNW6；MOSFET – Power, Dual N-Channel 40 V, 23 m, 25 A

Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：140.82 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：023N08SC；Package：PG-WSON-8；OptiMOSTM 5 Power-Transistor, 80 V

Features • Dual-side cooled package with lowest Junction-top thermal resistance • Optimized for synchronous rectification in server and desktop • 100 avalanche tested • Superior thermal resistance • N-channel • 175°C rated • Pb-free lead plating; RoHS compliant • Halogen-free according to

文件：1.08313 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：023N04NS；Package：PG-TO263-3；StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.05064 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：023N03F2；Package：PG-TO252-3；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features • Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：948.9 Kbytes 页数：13 Pages

Infineon

英飞凌

丝印：023N04NS；Package：PG-TO252-3；StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.0017 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：023N08NS；Package：PG-TO263-7；StrongIRFETTM 2 Power-Transistor

Features • Optimized for a wide range of applications • N-Channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：961.47 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：023N03F2；Package：PG-TO220-3；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features • Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：836.94 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：023N03F2；Package：PG-TDSON-8；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features • Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：1.44413 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：023N04NG；Package：PDFNWB5X6-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description T he TF023N04NG uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. ● Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switchin

文件：4.35827 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体