丝印：023N04NS；Package：PG-TO263-3；StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.05064 Mbytes 页数：11 Pages

INFINEON

英飞凌

StrongIRFET ™ 2 单 N 沟道功率 MOSFET 40 V，采用 D²PAK 封装

\n优势:\n• Multi-vendor compatibility\n• Right-fit products\n• Supports a wide variety of applications\n• Standard pinout allows for drop-in replacement\n• Increased current carrying capability\n• Ease of manufacturing;

Infineon

英飞凌

StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.0017 Mbytes 页数：11 Pages

INFINEON

英飞凌

TO-263

英飞凌/实单必成

上传：深圳市拓芯泰电子科技有限公司

TO-263

INFINEON

英飞凌

上传：深圳市亿鸿丰电子科技有限公司