| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：020N13N6；Package：PG-HSOF-8；MOSFET OptiMOSTM 6 Power-Transistor, 135 V Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •100avalanchetested •175°Coperatingtemperature •Optimizedformotordrivesandbatterypoweredapplications •Pb-freeleadpla | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：020N13N6；Package：PG-HDSOP-16；MOSFET OptiMOSTM 6 Power-Transistor, 135 V Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •100avalanchetested •175°Coperatingtemperature •Optimizedformotordrivesandbatterypoweredapplications •Pb-freeleadpla | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：020N13N6；Package：PG-HSOG-8；MOSFET OptiMOSTM 6 Power-Transistor, 135 V Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •100avalanchetested •175°Coperatingtemperature •Optimizedformotordrivesandbatterypoweredapplications •Pb-freeleadpla | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
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