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022N

型号:NVLJWS022N06CLT1G;Package:WDFNW6;MOSFET - Power, Single N-Channel 60 V, 21 m, 25 A

Features •SmallFootprintforCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

022N12N6

型号:IPB022N12NM6;Package:PG-TO263-3;MOSFET OptiMOSTM 6 Power-Transistor, 120 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Optimizedforhighfrequencyswitchingandsynchronousrectification •

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

022N12N6

型号:IPP022N12NM6;Package:PG-TO220-3;MOSFET OptiMOSTM 6 Power-Transistor, 120 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Optimizedforhighfrequencyswitchingandsynchronousrectification •

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

022N10NS

型号:IPT022N10NF2S;Package:PG-HSOF-8;MOSFET StrongIRFETTM 2 Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

022N6L5

型号:IQE022N06LM5;Package:PG-TSON-8;OptiMOSTM 5 Power-Transistor, 60 V

Features •OptimizedforhighperformanceSMPS,e.g.synchronousrectification •N-channel,logiclevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

022N6C5

型号:IQE022N06LM5CG;Package:PG-TTFN-9;OptiMOSTM 5 Power-Transistor, 60 V

Features •OptimizedforhighperformanceSMPS,e.g.synchronousrectification •N-channel,logiclevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

022N1N6

型号:ISC022N10NM6;Package:PG-TSON-8-3;OptiMOSTM 6 Power-Transistor, 100 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Optimizedforhighfrequencyswitchingandsynchronousrectification •

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
供应商型号品牌批号封装库存备注价格
ONSEMI/安森美
两年内
N/A
3600
原装现货,实单价格可谈
询价
ONSEMI/安森美
2511
WDFNW62.05x2.05
360000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
询价
onsemi
2025+
WDFNW-6
55740
询价
ON SEMICONDUCTOR
24+
con
35960
查现货到京北通宇商城
询价
NK/南科功率
2025+
UDFN-6
986966
国产
询价
三年内
1983
只做原装正品
询价
ON(安森美)
2447
8-SOIC
115000
3000个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
ON
1809+
DFN-6
3675
就找我吧!--邀您体验愉快问购元件!
询价
ON
24+
NA
3000
进口原装 假一罚十 现货
询价
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
更多022N供应商 更新时间2025-8-4 8:01:00