IPT025N15NM6

Marking：025N15N6；Package：PG-HSOF-8；MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

Features •N‑channel,normallevel •Verylowon‑resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21 •MSL1classifiedaccordingtoJ‑STD‑020

IPT026N12NM6

Marking：026N12N6；Package：PG-HSOF-8；OptiMOS™ 6 Power ‑Transistor, 120 V

Features •N‑channel,normallevel •Verylowon‑resistanceRDS(on) •ExcellentgatechargexRproduct(FOM)DS(on) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Optimizedforhighfrequencyswitching •Pb‑freeleadplatin

IPTC020N13NM6

Marking：020N13N6；Package：PG-HDSOP-16；MOSFET OptiMOSTM 6 Power-Transistor, 135 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •100avalanchetested •175°Coperatingtemperature •Optimizedformotordrivesandbatterypoweredapplications •Pb-freeleadpla

IPTC025N15NM6

Marking：025N15N6；Package：PG-HDSOP-16；MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

Features •N‑channel,normallevel •Verylowon‑resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21 •MSL1classifiedaccordingtoJ‑STD‑020

IPTC026N12NM6

Marking：026N12N6；Package：PG-HDSOP-16；MOSFET OptiMOSTM 6 Power-Transistor, 120 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •OptimizedforhighfrequencyswitchingandTopsidecooling •Pb-free

IPTG020N13NM6

Marking：020N13N6；Package：PG-HSOG-8；MOSFET OptiMOSTM 6 Power-Transistor, 135 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •100avalanchetested •175°Coperatingtemperature •Optimizedformotordrivesandbatterypoweredapplications •Pb-freeleadpla

IPTG025N10NM5

Marking：025N10N5；Package：PG-HSOG-8-1；OptiMOSTM 5 Power-Transistor, 100 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Idealforhighfrequencyswitchingandsync.rec.

IPTG025N15NM6

Marking：025N15N6；Package：PG-HSOG-8；MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

Features •N‑channel,normallevel •Verylowon‑resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21 •MSL1classifiedaccordingtoJ‑STD‑020

IPTG029N13NM6

Marking：029N13N6；Package：PG-HSOG-8；MOSFET OptiMOSTM 6 Power-Transistor, 135 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •100avalanchetested •175°Coperatingtemperature •Optimizedformotordrivesandbatterypoweredapplications •Pb-freeleadpla

IQD020N10NM5

Marking：02010N5；Package：PG-TSON-8；MOSFET OptiMOSTM 5 Power-Transistor, 100 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21