丝印：02；Package：SOT23；50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ

1. General description NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143ET 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces co

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NEXPERIA

安世

50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ

NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n PNP complement: PDTA143ET • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

NPN resistor-equipped transistor

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：53.03 Kbytes 页数：8 Pages

PHI

飞利浦

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦