LGE024N03-5DL8

Marking：024N03；Package：PDFN5x6-8L；N-Channel Enhancement Mode MOSFET

Features Superlowgatecharge Greendeviceavailable ExcellentcdV/dteffectdecline Advancedhighcelldensitytrenchtechnology

NCE0202M

Marking：0202M；Package：SOT-89-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE0202Musesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=200V,ID=2A RDS(ON)

NCE025N30G

Marking：025N30G；Package：DFN5x6-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE025N30Gusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.Itcan beusedinawidevarietyofapplications. Application ●DC/DCConverter ●Idealforhigh-frequencyswitchingandsynchronous rectification GeneralFeatures

NJM2902BVB4-T1

Marking：02BT1；Package：SSOP14-B4；High EMC Performance, Single Supply, Operational Amplifier

FEATURES AEC-Q100grade1qualificationinprogress InternalEMIfilter Operatingvoltagerange+3Vto+36V Inputoffsetvoltage0.5mVtyp. ConsumptioncurrentNJM2904B:0.7mAtyp. NJM2902B:1.2mAtyp. Slewrate0.4V/μstyp. Unity-gainstability Bipolarprocess Package

NVLJWD023N04CLTAG

Marking：023N；Package：WDFNW6；MOSFET – Power, Dual N-Channel 40 V, 23 m, 25 A

Features •SmallFootprintforCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVLJWS022N06CLT1G

Marking：022N；Package：WDFNW6；MOSFET - Power, Single N-Channel 60 V, 21 m, 25 A

Features •SmallFootprintforCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMFS021N10MCLT1G

Marking：021L10；Package：DFN5；MOSFET ??Power, Single N-Channel 100 V, 23 m, 31 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVMFWS021N10MCL−WettableFlankOptionforEnhanced OpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,

NVMFS025P04M8LT1G

Marking：025P04；Package：SO8FL；MOSFET - Power, Single P-Channel -40 V, 23 m, -34.6 A

Features •NVMFWS025P04M8L−WettableFlanksProduct •SmallFootprintforCompactDesign5x6mm •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMFS027N10MCLT1G

Marking：027L10；Package：DFN5；MOSFET ??Power, Single N-Channel 100 V, 26 m, 28 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •NVMFWS027N10MCL−WettableFlankProducts •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareR

NVMFWS021N10MCLT1G

Marking：021W10；Package：DFNW5；MOSFET ??Power, Single N-Channel 100 V, 23 m, 31 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVMFWS021N10MCL−WettableFlankOptionforEnhanced OpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,