丝印：001110；Package：DFN1010D-3；45 V, 100 mA PNP general-purpose transistors

Features and benefits  General-purpose transistors  Three current gain selections  Low package height of 0.37 mm  Suitable for Automatic Optical Inspection (AOI) of solder joint  AEC-Q101 qualified

文件：1.23481 Mbytes 页数：15 Pages

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丝印：001010；Package：DFN1010D-3；30 V, 1 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4130QA. 2. Features and benefits • Very low collector-

文件：726.66 Kbytes 页数：17 Pages

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丝印：00100010；Package：SOT883B；PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 2.2 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：836.02 Kbytes 页数：13 Pages

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丝印：00100101；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 22 k廓, R2 = 22 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC124EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：969.13 Kbytes 页数：12 Pages

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丝印：00100111；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 4.7 k廓, R2 = 4.7 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC143EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：839.15 Kbytes 页数：12 Pages

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丝印：00101000；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 4.7 k廓, R2 = open

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC143TMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：725.99 Kbytes 页数：12 Pages

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丝印：00101001；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 4.7 k廓, R2 = 10 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC143XMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■ Reduces pick

文件：962.15 Kbytes 页数：12 Pages

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丝印：00101010；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ

Features and benefits  100 mA output current capability  Reduces component count  Built-in bias resistors  Reduces pick and place costs  Simplifies circuit design  AEC-Q101 qualified  Leadless ultra small SMD plastic package  Low package height of 0.37 mm

文件：837.43 Kbytes 页数：12 Pages

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丝印：00101011；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 47 k廓, R2 = 47 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC144EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：969.87 Kbytes 页数：13 Pages

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丝印：00101110；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 47 k廓, R2 = 22 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC144WMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：834.24 Kbytes 页数：12 Pages

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