丝印：0010；Package：DFN1608D-2；40 V, 0.5 A low VF MEGA Schottky barrier rectifier

1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD1608 (DFN1608D-2) Surface-Mounted Device (SMD) plastic package with visible and solderable side p

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丝印：0011；Package：SOT8001；30 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET

文件：278.45 Kbytes 页数：15 Pages

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丝印：001001；Package：DFN1010D-3；45 V, 100 mA NPN general-purpose transistors

文件：1.28155 Mbytes 页数：15 Pages

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丝印：001011；Package：DFN1010D-3；45 V, 100 mA NPN general-purpose transistors

文件：1.28155 Mbytes 页数：15 Pages

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丝印：001101；Package：DFN1010D-3；45 V, 100 mA NPN general-purpose transistors

文件：1.28155 Mbytes 页数：15 Pages

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丝印：001110；Package：DFN1010D-3；45 V, 100 mA PNP general-purpose transistors

文件：1.37543 Mbytes 页数：15 Pages

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丝印：00100000；Package：SOT883B；PNP resistor-equipped transistor; R1 = 100 k廓, R2 = 100 k廓

文件：960.46 Kbytes 页数：12 Pages

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丝印：00100001；Package：SOT883B；PNP resistor-equipped transistor; R1 = 100 k廓, R2 = open

文件：616.56 Kbytes 页数：12 Pages

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丝印：00100011；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = open

文件：729.91 Kbytes 页数：12 Pages

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丝印：00100100；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 10 k廓

文件：628.32 Kbytes 页数：12 Pages

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