丝印：00110000；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 10 k廓, R2 = 47 k廓

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114YMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：838.53 Kbytes 页数：12 Pages

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丝印：00110011；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 2.2 k廓, R2 = 2.2 k廓

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：960.24 Kbytes 页数：13 Pages

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丝印：00110111；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 22 k廓, R2 = 22 k廓

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124EMB Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■ R

文件：840.92 Kbytes 页数：12 Pages

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丝印：00111001；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 22 k廓, R2 = 47 k廓

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124XMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：619.72 Kbytes 页数：12 Pages

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丝印：0010；Package：SOD882D；Unidirectional ESD protection diode

1. General description Unidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solde

文件：264.73 Kbytes 页数：11 Pages

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丝印：0010；Package：DFN1006D-2；Unidirectional ESD protection diode

1. General description Unidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solde

文件：282.77 Kbytes 页数：12 Pages

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丝印：0011；Package：DFN1006B-3；Very low capacitance bidirectional ESD protection diodes

1. General description Two bidirectional ElectroStatic Discharge (ESD) protection diodes designed to protect two signal lines from damage caused by ESD and other transients. The device is housed in a DFN1006B-3 (SOT883B) leadless ultra small Surface-Mounted Device (SMD) plastic package. 2. Fea

文件：265.81 Kbytes 页数：12 Pages

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丝印：00101000；Package：DFN1006D-2；20 V, 0.5 A low VF Schottky barrier rectifier

1. General description Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD882D (DFN1006D-2) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • Average fo

文件：243.54 Kbytes 页数：12 Pages

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丝印：0010；Package：DFN1006D-2；20 V, 0.5 A low VF MEGA Schottky barrier rectifier

1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD882D (DFN1006D-2) Surface-Mounted Device (SMD) plastic package with visible and solderable side p

文件：243.58 Kbytes 页数：12 Pages

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丝印：0011；Package：SOD882D；0.5 A low VF MEGA Schottky barrier rectifier

1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 F

文件：1.33722 Mbytes 页数：14 Pages

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