NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD

NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4570) SMALL MINI MOLD µPA813T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f

文件：53.87 Kbytes 页数：8 Pages

NEC

瑞萨

SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ´ 2SC4570) SMALL MINI MOLD FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transisto

文件：272.06 Kbytes 页数：10 Pages

RENESAS

瑞萨

SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ´ 2SC4570) SMALL MINI MOLD FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transisto

文件：272.06 Kbytes 页数：10 Pages

RENESAS

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD

NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4570) SMALL MINI MOLD µPA813T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f

文件：53.87 Kbytes 页数：8 Pages

NEC

瑞萨