UPA813T

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD

NPNSILICONEPITAXIALTRANSISTOR(WITHBUILT-IN2×2SC4570)SMALLMINIMOLD µPA813Thasbuilt-in2transistorswhichweredevelopedforUHF. FEATURES •HighfT fT=5.5GHzTYP.(@VCE=5V,IC=5mA,f=1GHz) •SmallCollectorCapacitance Cob=0.7pFTYP.(@VCB=5V,IE=0,f

UPA813T

SILICON TRANSISTOR

NPNSILICONEPITAXIALTRANSISTOR (WITHBUILT-IN2´2SC4570)SMALLMINIMOLD FEATURES •HighfT fT=5.5GHzTYP.(@VCE=5V,IC=5mA,f=1GHz) •SmallCollectorCapacitance Cob=0.7pFTYP.(@VCB=5V,IE=0,f=1MHz) •ASurfaceMountingPackageAdopted •Built-in2Transisto

UPA813T-T1

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD

NPNSILICONEPITAXIALTRANSISTOR(WITHBUILT-IN2×2SC4570)SMALLMINIMOLD µPA813Thasbuilt-in2transistorswhichweredevelopedforUHF. FEATURES •HighfT fT=5.5GHzTYP.(@VCE=5V,IC=5mA,f=1GHz) •SmallCollectorCapacitance Cob=0.7pFTYP.(@VCB=5V,IE=0,f

UPA813T-T1

SILICON TRANSISTOR

NPNSILICONEPITAXIALTRANSISTOR (WITHBUILT-IN2´2SC4570)SMALLMINIMOLD FEATURES •HighfT fT=5.5GHzTYP.(@VCE=5V,IC=5mA,f=1GHz) •SmallCollectorCapacitance Cob=0.7pFTYP.(@VCB=5V,IE=0,f=1MHz) •ASurfaceMountingPackageAdopted •Built-in2Transisto

UPC813

HighSlewRate,LowOffsetVoltageJ-FETInputOperationalAmplifier

FEATURES InputOffsetVoltage±1mV(TYP.)(±2.5mVMAX.) VIOTemperatureDrift±7μV/C(TYP.) InputBiasCurrent50pA(TYP.) SlewRate25V/μs(TYP.) UnityGainFrequency6MHz(TYP.) InputEquivalentNoiseVoltageDensity19nV/Hz(TYP.)(f=1kHz) Stableoperationagain

UZ813

POWERZENERS3WATT

WP813ED

10mmSOLIDSTATELAMP

WP813GD

10mmSOLIDSTATELAMP

WP813ID

10mmSOLIDSTATELAMP

WP813SRC/D

10mmSOLIDSTATELAMP