UPA814

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES •Lowvoltageoperation,lowphasedistortion •Lownoise:NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.7dBTYP.@VCE=1V,IC=3mA,f=2GHz •Flat-lead6-pinthin-typeultrasuperminimoldpackage. •Built-in2transistors(2×2SC5195)

UPA814T

SILICON TRANSISTOR

MICROWAVELOWNOISEAMPLIFIER NPNSILICONEPITAXIALTRANSISTOR (WITHBUILT-IN2´2SC5193)SMALLMINIMOLD FEATURES •LowVoltageOperation,LowPhaseDistortion •LowNoise NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.7dBTYP.@VCE=1V,IC=3mA,f=2GHz •LargeAbsolu

UPA814TC

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES •Lowvoltageoperation,lowphasedistortion •Lownoise:NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.7dBTYP.@VCE=1V,IC=3mA,f=2GHz •Flat-lead6-pinthin-typeultrasuperminimoldpackage. •Built-in2transistors(2×2SC5195)

UPA814TC-T1

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES •Lowvoltageoperation,lowphasedistortion •Lownoise:NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.7dBTYP.@VCE=1V,IC=3mA,f=2GHz •Flat-lead6-pinthin-typeultrasuperminimoldpackage. •Built-in2transistors(2×2SC5195)

UPA814TF

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION TheUPA814TFcontainstwoNE688NPNhighfrequencysiliconbipolarchips.NECsnewlowprofileTFpackageisidealforallportablewirelessapplicatonswherereducingcomponentheightisaprimeconsideration.Eachtransistorchipisindependentlymountedandeasilyconfiguredfortw

UPA814T

NPN SILICON HIGH FREQUENCY TRANSISTOR

UPA814T-T1-A

NPN SILICON HIGH FREQUENCY TRANSISTOR

UPA814T-A

Package：6-TSSOP，SC-88，SOT-363；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS 2 NPN 6V 9GHZ 6SO

UPA814T-T1

Package：6-TSSOP，SC-88，SOT-363；包装：卷带（TR）剪切带（CT） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS 2 NPN 6V 9GHZ 6SO

UPA814T-T1-A

Package：6-TSSOP，SC-88，SOT-363；包装：卷带（TR）剪切带（CT） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS 2 NPN 6V 9GHZ 6SO