SILICON TRANSISTOR

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ´ 2SC5193) SMALL MINI MOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolu

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RENESAS

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NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：157.91 Kbytes 页数：4 Pages

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NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES • Low voltage operation, low phase distortion • Low noise: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Flat-lead 6-pin thin-type ultra super minimold package. • Built-in 2 transistors (2 × 2SC5195)

文件：84.02 Kbytes 页数：20 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES • Low voltage operation, low phase distortion • Low noise: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Flat-lead 6-pin thin-type ultra super minimold package. • Built-in 2 transistors (2 × 2SC5195)

文件：84.02 Kbytes 页数：20 Pages

NEC

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NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION The UPA814TF contains two NE688 NPN high frequency silicon bipolar chips. NECs new low profile TF package is ideal for all portable wireless applicatons where reducing component height is a prime consideration. Each transistor chip is independently mounted and easily configured for tw

文件：18.59 Kbytes 页数：1 Pages

NEC

瑞萨

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：157.91 Kbytes 页数：4 Pages

CEL

NPN SILICON HIGH FREQUENCY TRANSISTOR

CEL

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

Renesas

瑞萨

Package：6-TSSOP，SC-88，SOT-363；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS 2 NPN 6V 9GHZ 6SO

CEL

Package：6-TSSOP，SC-88，SOT-363；包装：卷带（TR）剪切带（CT） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS 2 NPN 6V 9GHZ 6SO

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