SWITCHING N- AND P-CHANNEL POWER MOS FET

DESCRIPTION The µPA2790GR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application. FEATURES • Low on-state resistance N-channel RDS(on)1 = 28 mΩ MAX. (VGS = 10 V, ID = 3 A) RDS(on)2 = 40 mΩ MAX. (VGS = 4.5 V, ID = 3 A) P-channel

文件：198.92 Kbytes 页数：11 Pages

NEC

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2790GR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application. FEATURES • Low on-state resistance N-channel RDS(on)1 = 28 mΩ MAX. (VGS = 10 V, ID = 3 A) RDS(on)2 = 40 mΩ MAX. (VGS = 4.5 V, ID = 3 A) P-channel RDS(on)1 = 60 mΩ MAX. (VGS = −1

文件：404.27 Kbytes 页数：13 Pages

RENESAS

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SWITCHING N-CHANNEL AND P-CHANNEL POWER MOS FET

DESCRIPTION\nThe µPA2790GR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application.FEATURES\n• Low on-state resistance\n  N-channel RDS(on)1 = 28 mΩ MAX. (VGS = 10 V, ID = 3 A)\n                RDS(on)2 = 40 mΩ MAX. (VGS = 4.5 V, ID = 3 A)\n  P-channel RDS(on)1 = 60 mΩ • Low on-state resistance\n  N-channel RDS(on)1 = 28 mΩ MAX. (VGS = 10 V, ID = 3 A)\n                RDS(on)2 = 40 mΩ MAX. (VGS = 4.5 V, ID = 3 A)\n  P-channel RDS(on)1 = 60 mΩ MAX. (VGS = −10 V, ID = −3 A)\n                RDS(on)2 = 80 mΩ MAX. (VGS = −4.5 V, ID = −3 A)\n• Low input capacitance\n  ;

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