MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET

DESCRIPTION The μ PA2791GR is N- and P-channel MOS Field Effect Transistors designed for switching application. FEATURES • Low on-state resistance N-channel RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) P-channel

文件：248.99 Kbytes 页数：12 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2791GR is N- and P-channel MOS Field Effect Transistors designed for switching application. FEATURES • Low on-state resistance N-channel RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) P-channel RDS(on)1 = 82 mΩ MAX. (VG

文件：437.97 Kbytes 页数：14 Pages

RENESAS

瑞萨

N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

文件：2.58057 Mbytes 页数：14 Pages

VBSEMI

微碧半导体

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2791GR is N- and P-channel MOS Field Effect Transistors designed for switching application. FEATURES • Low on-state resistance N-channel RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) P-channel RDS(on)1 = 82 mΩ MAX. (VG

文件：437.97 Kbytes 页数：14 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET

DESCRIPTION The μ PA2791GR is N- and P-channel MOS Field Effect Transistors designed for switching application. FEATURES • Low on-state resistance N-channel RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) P-channel

文件：248.99 Kbytes 页数：12 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET

DESCRIPTION The μ PA2791GR is N- and P-channel MOS Field Effect Transistors designed for switching application. FEATURES • Low on-state resistance N-channel RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) P-channel

文件：248.99 Kbytes 页数：12 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2791GR is N- and P-channel MOS Field Effect Transistors designed for switching application. FEATURES • Low on-state resistance N-channel RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) P-channel RDS(on)1 = 82 mΩ MAX. (VG

文件：437.97 Kbytes 页数：14 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET

Renesas

瑞萨