MOS FET WITH SCHOTTKY BARRIER DIODE

DESCRIPTION The μ PA508TE is a switching device, which can be driven directly by a 2.5 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics, and a low forward voltage Schottky barrier diode, and is suitable for a

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N-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING

文件：144.73 Kbytes 页数：8 Pages

NEC

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N-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING

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GaAs INTEGRATED CIRCUIT

FEATURES • Wide operating frequency range fin = 8 to 13 GHz @TA = 25 °C • Low phase Noise • Hermetically sealed package assuers high reliability

文件：220.84 Kbytes 页数：10 Pages

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文件：457.52 Kbytes 页数：10 Pages

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YFWDIODE

佑风微