UPA507TE资料datasheet下载供应价格瑞萨-114ic电子网

首页 >UPA507TE>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
UPA507TE	文件：370.11 Kbytes Page：10 Pages	MOS FET WITH SCHOTTKY BARRIER DIODE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DESCRIPTION The μ PA507TE is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics and a low 文件：370.11 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
UPA507TE	文件：146.21 Kbytes Page：8 Pages	P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING 文件：146.21 Kbytes 页数：8 Pages	NEC 瑞萨	NEC
UPA507TE-T1-A	文件：370.11 Kbytes Page：10 Pages	MOS FET WITH SCHOTTKY BARRIER DIODE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DESCRIPTION The μ PA507TE is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics and a low 文件：370.11 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
UPA507TE-T1-AT	文件：370.11 Kbytes Page：10 Pages	MOS FET WITH SCHOTTKY BARRIER DIODE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DESCRIPTION The μ PA507TE is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics and a low 文件：370.11 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
UPA507TE-T2-A	文件：370.11 Kbytes Page：10 Pages	MOS FET WITH SCHOTTKY BARRIER DIODE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DESCRIPTION The μ PA507TE is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics and a low 文件：370.11 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
UPA507TE-T2-AT	文件：370.11 Kbytes Page：10 Pages	MOS FET WITH SCHOTTKY BARRIER DIODE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DESCRIPTION The μ PA507TE is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics and a low 文件：370.11 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
UPA507TE	文件：300 bytes Page：1 Pages	P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING	Renesas 瑞萨	Renesas

详细参数

型号：
UPA507TE
制造商：
NEC
制造商全称：
NEC
功能描述：
P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	UPA507TE	NEC	24+	SOT-153/SOT-23-5	14200	新进库存/原装	询价
深圳市壹芯创科技有限公司	UPA507TE	NEC	22+	SOT153	8200	全新进口原装现货	询价
深圳市振宏微科技有限公司	UPA507TE	SOT-153	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳市豪迈兴电子有限公司	UPA507TE-T1	NEC	24+	SOT23-5/3000	5989	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市凌旭科技有限公司	UPA507TE-T1	NEC	2016+	SOT23-5	3000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市鹏和科技有限公司	UPA507TE-TI-A	NEC	24+	SOT153	5000	只做原装公司现货	询价
深圳市华来深电子有限公司	UPA507TE-T1-A	NEC	23+	SOT153	8650	受权代理!全新原装现货特价热卖!	询价
深圳市华斯顿科技有限公司	UPA507TE-T1-A/JM	NEC	25+23+	SOT23-5	30031	绝对原装正品现货,全新深圳原装进口现货	询价
瀚佳科技(深圳)有限公司	UPA507TE-T1	NEC	24+	SOT153	30980	原装现货/放心购买	询价
深圳市宇创芯科技有限公司	UPA507TE-T1	NEC	24+	SOT23-5	9600	原装现货,优势供应,支持实单!	询价

更多UPA507TE供应商更新时间2026-1-18 16:00:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2026 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号