丝印：TK11P65W；Package：DPAK；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.35 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.45 mA)

文件：245.99 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：TK11P65W；Package：DPAK；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.35 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.45 mA)

文件：245.99 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：319.86 Kbytes 页数：2 Pages

ISC

无锡固电