丝印：TK9P65W；Package：DPAK；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω(typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V(VDS = 10 V, ID = 0.35 mA)

文件：389.37 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：TK9P65W；Package：DPAK；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω(typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V(VDS = 10 V, ID = 0.35 mA)

文件：389.37 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：320.73 Kbytes 页数：2 Pages

ISC

无锡固电