型号：TK200V65Z5；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 95 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.154 Ω (typ.) (3) High-speed switching properties with lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 0.61 mA)

文件：504.03 Kbytes 页数：10 Pages

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东芝

型号：TK200V65Z5；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 95 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.154 Ω (typ.) (3) High-speed switching properties with lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 0.61 mA)

文件：504.03 Kbytes 页数：10 Pages

TOSHIBA

东芝