丝印：TK25V60X；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.11 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.2 mA)

文件：232.93 Kbytes 页数：10 Pages

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丝印：TK25V60X5；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 120 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.125 Ω(typ.) (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V(VDS = 10 V, ID = 1.2 mA)

文件：364.38 Kbytes 页数：10 Pages

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丝印：TK25V60X；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.11 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.2 mA)

文件：232.93 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：TK25V60X5；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 120 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.125 Ω(typ.) (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V(VDS = 10 V, ID = 1.2 mA)

文件：364.38 Kbytes 页数：10 Pages

TOSHIBA

东芝