丝印：TK370A60F；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Easy to control Gate switching (2) Low drain-source on-resistance: RDS(ON) = 0.3 Ω (typ.) (3) Enhancement mode: Vth = 2 to 4 V (VDS = 10 V, ID = 2.04 mA)

文件：400.53 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：TK370A60F；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Easy to control Gate switching (2) Low drain-source on-resistance: RDS(ON) = 0.3 Ω (typ.) (3) Enhancement mode: Vth = 2 to 4 V (VDS = 10 V, ID = 2.04 mA)

文件：400.53 Kbytes 页数：10 Pages

TOSHIBA

东芝