丝印：TK6P65W；Package：DPAK；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.89 Ω(typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V(VDS = 10 V, ID = 0.18 mA)

文件：389.7 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：TK6P65W；Package：DPAK；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.89 Ω(typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V(VDS = 10 V, ID = 0.18 mA)

文件：389.7 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：320.23 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET uses advanced trench technology

文件：2.09001 Mbytes 页数：7 Pages

DOINGTER

杜因特