丝印：TK210V65Z；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.175 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.61 mA)

文件：462.12 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：TK210V65Z；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.175 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.61 mA)

文件：462.12 Kbytes 页数：10 Pages

TOSHIBA

东芝