丝印：TK2P90E；Package：DPAK；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 4.7 Ω (typ.) (2) Low leakage current : IDSS = 10 μA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.2 mA)

文件：330.79 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：TK2P90E；Package：DPAK；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 4.7 Ω (typ.) (2) Low leakage current : IDSS = 10 μA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.2 mA)

文件：330.79 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：320.35 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET uses advanced trench technology

文件：834.34 Kbytes 页数：5 Pages

DOINGTER

杜因特