丝印：TK20V60W；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.136 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA)

文件：243.58 Kbytes 页数：10 Pages

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丝印：TK20V60W5；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 110 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.156 Ω(typ.) (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V(VDS = 10 V, ID = 1 mA)

文件：279.68 Kbytes 页数：10 Pages

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东芝

丝印：TK20V60W；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.136 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA)

文件：243.58 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：TK20V60W5；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 110 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.156 Ω(typ.) (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V(VDS = 10 V, ID = 1 mA)

文件：279.68 Kbytes 页数：10 Pages

TOSHIBA

东芝