丝印：TK290P60Y；Package：DPAK；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.23 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.45 mA)

文件：445.2 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：TK290P60Y；Package：DPAK；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.23 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.45 mA)

文件：445.2 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：DPAK；Package：TO-252；Isc N-Channel MOSFET Transistor

文件：322.09 Kbytes 页数：2 Pages

ISC

无锡固电