丝印：TK16G60W5；Package：D2PAK；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 100 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS =

文件：247.78 Kbytes 页数：10 Pages

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东芝

丝印：TK16G60W5；Package：D2PAK；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 100 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS =

文件：247.78 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：309.98 Kbytes 页数：2 Pages

ISC

无锡固电