4 th Generation, High-Accuracy, Ultra-Low-Power, 16-bit Temperature Sensor Platform

Highlights • Temperature accuracy: up to ±0.2 °C • Supply voltage: 1.08 V … 3.6 V • Average current: 0.4 µA (at meas. rate 1 Hz) • Idle current: 80 nA • I2C fast mode plus, CRC checksum • Available with multiple I2C addresses • Operating range: -40…125 °C • NIST traceability • JEDEC JESD4

文件：574.67 Kbytes 页数：15 Pages

Sensirion

盛思锐

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：489.12 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

4th Generation, High-Accuracy, Ultra-Low-Power, 16-bit Temperature Sensor Platform

General Description The STS4x is a fully digital temperature sensor platform offering different accuracy classes, currently available is the STS40. The I2C interface provides multiple preconfigured I2C addresses and enables an ultra-low power budget. Designed to cost, this four-pin dual-flatno-

文件：537.45 Kbytes 页数：14 Pages

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盛思锐

4th Generation, High-Accuracy, Ultra-Low-Power, 16-bit Temperature Sensor Platform

General Description The STS4x is a fully digital temperature sensor platform offering different accuracy classes, currently available is the STS40. The I2C interface provides multiple preconfigured I2C addresses and enables an ultra-low power budget. Designed to cost, this four-pin dual-flatno-

文件：537.45 Kbytes 页数：14 Pages

Sensirion

盛思锐

4th Generation, High-Accuracy, Ultra-Low-Power, 16-bit Temperature Sensor Platform

General Description The STS4x is a fully digital temperature sensor platform offering different accuracy classes, currently available is the STS40. The I2C interface provides multiple preconfigured I2C addresses and enables an ultra-low power budget. Designed to cost, this four-pin dual-flatno-

文件：537.45 Kbytes 页数：14 Pages

Sensirion

盛思锐

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：492.73 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

文件：590.88 Kbytes 页数：8 Pages

Samhop

三合微科

P -Channel E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 Package.

文件：116.87 Kbytes 页数：7 Pages

Samhop

三合微科

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：499.79 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Dual N-Channel 40 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFETPower MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • CCFL Inverter • DC/DC Converter • HDD

文件：483.1 Kbytes 页数：9 Pages

VBSEMI

微碧半导体