N-CHANNEL 20V - 0.030 ohm - 6A SO-8 2.7V-DRIVE STripFET??II POWER MOSFET

Description This Power MOSFET series has been developed using STMicroelectronics unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters

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STMICROELECTRONICS

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N-Channel 20V (D-S) MOSFET

文件：928.95 Kbytes 页数：9 Pages

VBSEMI

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丝印：6N20V；Package：SOP-8；N-Channel MOSFET

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KEXIN

科信电子

N沟道20 V、30 mOhm典型值、6 A、2.7 V驱动STripFET II功率MOSFET，SO-8封装

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and compu • Ultra low threshold gate drive \n• 100% avalanche tested \n• Low gate charge;

ST

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