LOW GATE CHARGE StripFET III MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：442.01 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N-channel 30V - 0.018 ohm - 8A/P-channel 30V - 0.045 ohm - 5A - SO-8 Low gate charge STripFET III MOSFET

文件：426.12 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 30V - 0.018 廓 - 8A/p-channel 30V - 0.045 廓 - 5A - SO-8 Low gate charge STripFET??III MOSFET

文件：429.53 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 30V - 0.018 ohm - 8A/P-channel 30V - 0.045 ohm - 5A - SO-8 Low gate charge STripFET III MOSFET

文件：426.12 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 30V - 0.018 廓 - 8A/p-channel 30V - 0.045 廓 - 5A - SO-8 Low gate charge STripFET??III MOSFET

文件：429.53 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 30 V, 0.018 Ohm typ., 8 A, P-channel 30 V, 0.045 Ohm typ., 5 A Power MOSFET in a SO-8 package

This device is a complementary N-channel and P-channel Power MOSFET developed using STripFET™ II (P-channel) and STripFET™ V (N-channel) technologies. The resulting transistors show extremely high packing density for low on-resistance and rugged avalanche characteristics.\n • Conduction losses reduced\n• Switching losses reduced• Low threshold drive\n• Standard outline for easy automated surface mount assembly;

ST

意法半导体